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PD- 93898A
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF7451
HEXFET(R) Power MOSFET
VDSS
150V
RDS(on) max
0.09
ID
3.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
S S S G
1
8 7
A A D D D D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
3.6 2.9 29 2.5 0.02 30 7.9 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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01/31/01
IRF7451
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.19 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 0.09 VGS = 10V, ID = 2.2A 5.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 28 6.8 13 10 4.2 17 15 990 220 42 1260 100 180 Max. Units Conditions --- S VDS = 25V, ID = 2.2A 41 ID = 2.2A 10 nC VDS = 120V 20 VGS = 10V --- VDD = 75V --- ID = 2.2A ns --- RG = 6.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
210 3.6
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 76 270 2.3 A 29 1.3 110 400 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.2A, VGS = 0V TJ = 25C, I F = 2.2A di/dt = 100A/s
D
S
2
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IRF7451
100
VGS TOP 15.0V 12.0V 10.0V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V
100
VGS 15.0V 12.0V 10.0V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
I D, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
1
0.1
1
5.0V
5.0V
0.01
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.5
ID = 3.6A
I D , Drain-to-Source Current (A)
2.0
10
TJ = 150 C
1.5
1
TJ = 25 C
1.0
0.1
0.5
0.01 4.0
V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7451
100000
16
C, Capacitance(pF)
10000
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
ID = 2.2A V DS = 120V V DS = 75V V DS = 30V
12
1000
Ciss Coss
8
100
Crss
10 1 10 100 1000
4
0 0 10 20 30 40
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
ID , Drain Current (A)
10
10 100us
TJ = 150 C TJ = 25 C
1
1ms 1 10ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0
0.1 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7451
4.0
VDS VGS
RD
ID , Drain Current (A)
3.0
D.U.T.
+
RG
- VDD
2.0
10V
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150
TA , Ambient Temperature (C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1 10 100 1000
10
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7451
RDS ( on ) , Drain-to-Source On Resistance ( )
0.083 VGS = 10V
( RDS(on), Drain-to -Source On Resistance )
0.085
0.120
0.105
0.080
ID = 2.2A
0.090
0.078
0.075
0.075
0.073
0.070 0 2 4 6 8 10 12 14 16 ID , Drain Current ( A )
0.060 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
EAS , Single Pulse Avalanche Energy (mJ)
500
VG
VGS
3mA
Charge
IG ID
400
ID 1.6A 2.9A BOTTOM 3.6A TOP
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15V
V (B R )D S S tp VD S L DRIVER
100
RG 20 V IAS tp
D.U .T IA S 0.0 1
+ V - DD
A
0 25 50 75 100 125 150
Starting T J , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7451
SO-8 Package Details
D -B-
D IM
5
IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7
M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0 .2 5 (.0 1 0 ) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0 .1 0 (.0 0 4 ) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 4 5
.05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8
1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8
-C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS
L
R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X
NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 ) 8X
1 .2 7 ( .0 5 0 ) 3X
SO-8 Part Marking
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IRF7451
SO-8 Tape and Reel
T ER M INA L NU M BE R 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEE D D IR EC TIO N
N OT E S : 1 . CO NT RO L L ING DIM E N S ION : M IL L IM E T E R. 2 . A L L D IM E N S ION S A R E S H O W N IN M IL L IM E T E R S (IN CHES ). 3 . O U TL IN E C O N F O RM S T O E IA -4 81 & E IA -5 4 1.
330.00 (12 .9 92) MA X.
14.40 ( .566 ) 12.40 ( .488 ) N O TE S : 1. CO N T RO LL ING D IME N SIO N : MIL LIM ET ER . 2. O UT LIN E C ON F O RM S TO EIA-481 & E IA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time When mounted on 1 inch square copper board.
as Coss while VDS is rising from 0 to 80% VDSS.
Starting TJ = 25C, L = 33mH,
RG = 25, IAS = 3.6A.
ISD 2.2A, di/dt 180A/s, VDD V(BR)DSS,
TJ 150C
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01
8
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